5961-01-238-7896
Find complete technical information, availability, and procurement data for: 5961-01-238-7896
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
field effect internal configuration, 0.230 inches nominal overall length, unable to decode inclosure material, 0.360 inches nominal overall diameter, 0.560 inches maximum terminal length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.230 inches nominal
- Terminal Length
- 0.560 inches maximum
- Overall Diameter
- 0.360 inches nominal
- Internal Configuration
- field effect
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 90.0 maximum drain to gate voltage and 90.0 maximum drain to source voltage and 20.0 maximum gate to source voltage
- Current Rating Per Characteristic
- 16.00 amperes maximum drain current
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius ambient air
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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When the NSN 5961-01-238-7896 was assigned to the Federal Catalog?
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