5961-01-216-7265
Find complete technical information, availability, and procurement data for: 5961-01-216-7265
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
1 mounting facility quantity, 0.190 inches maximum overall height, unable to decode inclosure material, 0.650 inches maximum overall length, 0.420 inches maximum overall width
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.650 inches maximum
- Overall Height
- 0.190 inches maximum
- Overall Width
- 0.420 inches maximum
- Mounting Facility Quantity
- 1
- Internal Configuration
- junction contact
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-220
- Mounting Method
- unthreaded hole
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- -60.0 maximum collector to base voltage/static/emitter open and -60.0 maximum collector to emitter voltage/static/base open and -7.0 maximum emitter to base voltage, static, collector open
- Current Rating Per Characteristic
- -3.00 amperes maximum collector current, dc and -0.50 amperes maximum base current, dc
- Power Rating Per Characteristic
- 30.0 watts maximum collector power dissipation
- Transfer Ratio
- 200.0 maximum static forward current transfer ratio, common-emitter
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius junction
- Special Features
- junction pattern arrangement: nip
- Terminal Type And Quantity
- 3 pin
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|---|---|
| 2SB834-Y | Transistor |
| 30-20-8341 | Transistor |
FAQs
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Does NSN 5961-01-216-7265 contain precious materials?
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When the NSN 5961-01-216-7265 was assigned to the Federal Catalog?
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