5961-01-170-2162
Find complete technical information, availability, and procurement data for: 5961-01-170-2162
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
unable to decode inclosure material, 0.250 inches nominal overall length, junction contact internal configuration, 0.500 inches minimum terminal length, 0.325 inches nominal overall diameter
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.250 inches nominal
- Terminal Length
- 0.500 inches minimum
- Overall Diameter
- 0.325 inches nominal
- Internal Configuration
- junction contact
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- burn in and hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- -30.0 maximum collector to base voltage/static/emitter open and -5.0 maximum emitter to base voltage, static, collector open and -30.0 maximum collector to emitter voltage/static/base open and -30.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter
- Current Rating Per Characteristic
- 1.00 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 4.0 watts maximum total power dissipation
- Transfer Ratio
- 40.0 minimum static forward current transfer ratio, common-emitter
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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When the NSN 5961-01-170-2162 was assigned to the Federal Catalog?
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