5961-01-111-5659
Find complete technical information, availability, and procurement data for: 5961-01-111-5659
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.260 inches maximum overall length, 0.370 inches maximum overall diameter, junction contact internal configuration, unable to decode inclosure material, 1.500 inches minimum terminal length
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.260 inches maximum
- Terminal Length
- 1.500 inches minimum
- Overall Diameter
- 0.370 inches maximum
- Internal Configuration
- junction contact
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-5
- Mounting Method
- terminal
- Terminal Circle Diameter
- 0.200 inches nominal
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 6.0 maximum emitter to base voltage, static, collector open and 400.0 maximum collector to base voltage/static/emitter open and 400.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 350.0 maximum breakdown voltage, collector-to-emitter, base open
- Current Rating Per Characteristic
- 1.00 amperes maximum collector current, dc and 0.50 amperes maximum base current, dc
- Power Rating Per Characteristic
- 2.0 watts maximum total device dissipation
- Maximum Operating Temp Per Measurement Point
- 175.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 3 uninsulated wire lead
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FAQs
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When the NSN 5961-01-111-5659 was assigned to the Federal Catalog?
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