5961-00-401-2955
Find complete technical information, availability, and procurement data for: 5961-00-401-2955
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
2 mounting facility quantity, unable to decode inclosure material, 0.875 inches maximum overall diameter, 0.328 inches maximum overall length, junction contact internal configuration
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.328 inches maximum
- Overall Diameter
- 0.875 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
- to-3
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 500.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 400.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
- Current Rating Per Characteristic
- 2.00 amperes maximum base current, dc and 3.50 amperes maximum collector current, dc
- Power Rating Per Characteristic
- 100.0 watts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 150.0 celsius ambient air
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 2 uninsulated wire lead and 1 case
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FAQs
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When the NSN 5961-00-401-2955 was assigned to the Federal Catalog?
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