5961-00-252-1328
Find complete technical information, availability, and procurement data for: 5961-00-252-1328
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An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes:semiconductor device, diode and semiconductor device, thyristor. For solid state devices which are responsive to visible or infrared radiant energy, see semiconductor device, photo.
0.250 inches minimum and 0.340 inches maximum overall length, junction contact internal configuration, 2 mounting facility quantity, unable to decode inclosure material, 0.620 inches maximum overall diameter
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- Inclosure Material
- unable to decode
- Overall Length
- 0.250 inches minimum and 0.340 inches maximum
- Overall Diameter
- 0.620 inches maximum
- Mounting Facility Quantity
- 2
- Internal Configuration
- junction contact
- Electrode Internally-Electrically Connected To Case
- collector
- Mounting Method
- unthreaded hole
- Features Provided
- hermetically sealed case
- Semiconductor Material
- silicon
- Voltage Rating In Volts Per Characteristic
- 40.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open and 40.0 maximum breakdown voltage, collector-to-emitter, base open
- Current Rating Per Characteristic
- 3.00 amperes maximum collector current, dc and 1.00 amperes maximum base current, dc
- Power Rating Per Characteristic
- 200.0 milliwatts maximum collector power dissipation
- Maximum Operating Temp Per Measurement Point
- 200.0 celsius junction
- Special Features
- junction pattern arrangement: npn
- Terminal Type And Quantity
- 2 uninsulated wire lead and 1 case
- Specification/Standard Data
- 80131-release5676 professional/industrial association specification
Related Parts
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| Part Number | Name |
|---|---|
| 2N4231 | Transistor |
FAQs
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