5962-01-357-1981
Find complete technical information, availability, and procurement data for: 5962-01-357-1981
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"a microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0"."
radiation hardened iaw esd-82-te-1390b;esd;hci;sh;static,random access memory special features, ram memory device type, feat criticality code justification, milstar end item identification
Product Characteristics
Below you’ll find the complete technical specifications and performance data for this part, including material details and compliance information.
- End Item Identification
- milstar
- Criticality Code Justification
- feat
- Memory Device Type
- ram
- Special Features
- radiation hardened iaw esd-82-te-1390b;esd;hci;sh;static,random access memory
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| G293514 | Memory Microcircuit |
| G293514-2 | Memory Microcircuit |
| IDT7188L45EBRT | Memory Microcircuit |
FAQs
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Does NSN 5962-01-357-1981 contain precious materials?
Does NSN 5962-01-357-1981 contain hazardous materials?
When the NSN 5962-01-357-1981 was assigned to the Federal Catalog?
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