68A732560-2003
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Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see rectifier, semiconductor device. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see integrated circuit (as modified). Excludes:semiconductor devices, unitized; semiconductor device assembly; and rectifier network, unitized.
nose cover,aim 9 missile launcher end item identification, beryllium copper alloy 172,qq-c-533 cond 1/4 h; finish per spec 68a900000; 3.320 in. overall lg; 1.900 in. w; 0.050 in. thk; bend one end 0.950 in. lg,0.380 rad,two holes 0.196 min to 0.202 max dia,1.300 in. apart,equally spaced 0.300 in. from sides & 0.410 in. from end; bend other end 0.370 in. lg,0.680 rad special features
Product Characteristics
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- End Item Identification
- nose cover,aim 9 missile launcher
- Special Features
- beryllium copper alloy 172,qq-c-533 cond 1/4 h; finish per spec 68a900000; 3.320 in. overall lg; 1.900 in. w; 0.050 in. thk; bend one end 0.950 in. lg,0.380 rad,two holes 0.196 min to 0.202 max dia,1.300 in. apart,equally spaced 0.300 in. from sides & 0.410 in. from end; bend other end 0.370 in. lg,0.680 rad
Related Parts
This NSN group includes multiple components designed to meet specific performance and operational standards. Each listing provides detailed specs, functionality data, and replacement compatibility information:
| Part Number | Name |
|---|---|
| 68A732560-2003 | Flat Spring |
FAQs
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