NSN 5962-01-513-8357

Memory Microcircuit

FSC: 5962     NIIN: 015138357
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Product Characteristics

NSN:
5962015138357
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Body Length:
Between 0.920 inches and 1.060 inches
Body Width:
Between 0.220 inches and 0.310 inches
Body Height:
Between 0.070 inches and 0.185 inches
Maximum Power Dissipation Rating:
1.0 watts
Operating Tempurature Range:
-55.0/+125.0 degrees celsius
Storage Tempurature Range:
-65.0/+150.0 degrees celsius
End Application:
F16 aircraft
Features Provided:
Static operation and electrostatic sensitive and w/enable and high speed
Inclosure Material:
Ceramic
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Complementary-metal oxide-semiconductor logic
Input Circuit Pattern:
18 input
Current Rating Per Characteristic:
120.00 milliamperes reverse current, dc absolute
Terminal Surface Treatment:
Solder
Voltage Rating And Type Per Characteristic:
-0.5 volts power source and 7.0 volts power source
Capitance Rating Per Characteristic:
5.00 input picofarads and 7.00 output picofarads
Time Rating Per Chacteristic:
45.00 nanoseconds access
Memory Device Type:
Ram
Memory Capacity:
16k, 4k x 4
Test Data Document:
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
Terminal Type And Quantity:
24 printed circuit

Part Numbers

  • P4C1681L-45CMB
    PYRAMID SEMICONDUCTOR CORP
  • P4C1681L-45DMB
    PYRAMID SEMICONDUCTOR CORP

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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PYRAMID SEMICONDUCTOR CORP - 3DTT2