NSN 5962-01-373-9120

Memory Microcircuit

FSC: 5962     NIIN: 013739120
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Product Characteristics

NSN:
5962013739120
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Operating Tempurature Range:
-55.0/+125.0 degrees celsius
Storage Tempurature Range:
-65.0/+150.0 degrees celsius
End Application:
Display conso e/i fscm 49956
Features Provided:
Bipolar and electrically alterable and low power and programmed and high reliability
Inclosure Material:
Ceramic
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Transistor-transistor logic
Case Outline Source And Designator:
D-2 mil-m-38510
Current Rating Per Characteristic:
100.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable
Terminal Surface Treatment:
Solder
Part Name Assigned By Controlling Agency:
1024-bit bipola (256x4) electrically programmable read only memory
Voltage Rating And Type Per Characteristic:
-0.5 volts applied and 7.0 volts applied
Memory Device Type:
Eeprom
Hybrid Technology Type:
Monolithic
Terminal Type And Quantity:
16 printed circuit
Purchase Description Identification:
4995-69-797-3811

Part Numbers

  • 979738-114
    RAYTHEON COMPANY
  • DM54S287J/883
    NATIONAL SEMICONDUCTOR CORPORATION
  • MMI6301-J
    ADVANCED MICRO DEVICES, INC.
  • PR979738-114
    RAYTHEON COMPANY
  • ROM/PROM
    DLA LAND AND MARITIME

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5962-01-373-9120 microcircuit,memory
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Cage Codes
RAYTHEON COMPANY - 3B150
NATIONAL SEMICONDUCTOR CORPORATION - 27014
ADVANCED MICRO DEVICES, INC. - 34335
DLA LAND AND MARITIME - 16236