NSN 5962-01-372-6878

Memory Microcircuit

FSC: 5962 NIIN: 013726878

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Product Characteristics

NSN:

5962013726878

Demilitarization:

DEMIL/MLI

INC:

41015

Shelf Life:

N/A

Body Length:

1.060 inches

Body Width:

0.200 inches

Body Height:

0.310 inches

Maximum Power Dissipation Rating:

1.2 watts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

End Application:

7p blk 2 dcn, e/i fscm 49956

Features Provided:

Programmable

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Output Logic Form:

Bipolar metal-oxide semiconductor

Input Circuit Pattern:

16 input

Case Outline Source And Designator:

D-8 mil-m-38510

Current Rating Per Characteristic:

12.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable

Terminal Surface Treatment:

Solder

Part Name Assigned By Controlling Agency:

Microcircuit, memory, 16-input 4-output registered and-or gate array

Voltage Rating And Type Per Characteristic:

5.0 volts power source

Memory Device Type:

Pal

Hybrid Technology Type:

Monolithic

Test Data Document:

81349-mil-m-38510 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.). And 96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

Terminal Type And Quantity:

20 printed circuit

Specification Data:

67268-5962-85155 government standard

Nondefinitive Specification/std Data:

16 type and r case and a finish