NSN 5962-01-360-1357

Memory Microcircuit

FSC: 5962 NIIN: 013601357

DODParts.com distributes electronic microcircuits, aircraft parts and consumables, electrical parts, fittings and other components for the aerospace and defense industries. Submit the short price quote form for NSN 5962-01-360-1357 to receive an up to date pricing and availability quote by email.

Product Characteristics

NSN:

5962013601357

Demilitarization:

DEMIL/MLI

INC:

41015

Shelf Life:

N/A

Maximum Power Dissipation Rating:

1.0 watts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

End Application:

Milstar

Features Provided:

Electrostatic sensitive

Inclosure Configuration:

Flat pack

Output Logic Form:

Complementary-metal oxide-semiconductor logic

Criticality Code Justification:

Feat

Case Outline Source And Designator:

F-9 mil-m-38510

Current Rating Per Characteristic:

60.00 milliamperes supply

Part Name Assigned By Controlling Agency:

Cmos static random access memory

Voltage Rating And Type Per Characteristic:

5.5 volts total supply

Time Rating Per Chacteristic:

70.00 nanoseconds access

Memory Device Type:

Ram

Special Features:

Radiation hardned iaw esd-82-te-1390b; esd; hci;

Part Numbers

G309286
RAYTHEON COMPANY
G309286-1
RAYTHEON COMPANY
IDT6167LA70DBRT
INTEGRATED DEVICE TECHNOLOGY INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

Similar NSN

Need current pricing? Get a quote

Receive an official quote via email with pricing, availability, condition, and certifications when you submit this form below.

Cage Codes

RAYTHEON COMPANY - 49956

RAYTHEON COMPANY - 3B150

INTEGRATED DEVICE TECHNOLOGY INC - 61772