NSN 5962-01-355-9127

Memory Microcircuit

FSC: 5962 NIIN: 013559127

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Product Characteristics

NSN:

5962013559127

Demilitarization:

DEMIL/MLI

INC:

41015

Shelf Life:

N/A

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

End Application:

Milstar

Features Provided:

Electrostatic sensitive and radiation hardened and static operation and tested to mil-std-883

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Criticality Code Justification:

Feat and cbbl and nhcf

Case Outline Source And Designator:

D-9 mil-m-38510

Part Name Assigned By Controlling Agency:

Microcircuit, digital-2k x 8 bits, static ram

Voltage Rating And Type Per Characteristic:

-0.5 volts total supply and 7.0 volts total supply

Memory Device Type:

Ram

Special Features:

Esd and hci; rad hardness iaw: esd-82-te-1390b

Nuclear Hardness Critical Feature:

Hardened

Terminal Type And Quantity:

24 printed circuit

Part Numbers

G319133
RAYTHEON COMPANY
G319133-2
RAYTHEON COMPANY
IDT6116LA55EBRT
INTEGRATED DEVICE TECHNOLOGY INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

Similar NSN

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Cage Codes

RAYTHEON COMPANY - 49956

RAYTHEON COMPANY - 3B150

INTEGRATED DEVICE TECHNOLOGY INC - 61772