NSN 5962-01-303-5763

Memory Microcircuit

FSC: 5962 NIIN: 013035763

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Product Characteristics

NSN:

5962013035763

Demilitarization:

INC:

41015

Shelf Life:

N/A

Body Length:

0.640 inches

Body Width:

Between 0.300 inches and 0.420 inches

Body Height:

Between 0.045 inches and 0.090 inches

Maximum Power Dissipation Rating:

1.02 watts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

Features Provided:

Hermetically sealed and burn in and bipolar and programmable and schottky

Inclosure Material:

Ceramic

Inclosure Configuration:

Flat pack

Output Logic Form:

Transistor-transistor logic

Input Circuit Pattern:

13 input

Case Outline Source And Designator:

F-6 mil-m-38510

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

7.0 volts power source

Time Rating Per Chacteristic:

90.00 nanoseconds propagation delay time, low to high level output and 90.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Rom

Test Data Document:

81349-mil-m-38510 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

24 flat leads

Specification Data:

81349-mil-m-38510/208 government specification