NSN 5962-01-254-5149

Memory Microcircuit

FSC: 5962 NIIN: 012545149

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Product Characteristics

NSN:

5962012545149

Demilitarization:

INC:

41015

Shelf Life:

N/A

Body Length:

0.840 inches

Body Width:

Between 0.220 inches and 0.310 inches

Body Height:

0.185 inches

Maximum Power Dissipation Rating:

633.0 milliwatts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

Features Provided:

Hermetically sealed and burn in and 3-state output and programmable and monolithic

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Output Logic Form:

Complementary-metal oxide-semiconductor logic

Input Circuit Pattern:

6 input

Case Outline Source And Designator:

D-2 mil-m-38510

Current Rating Per Characteristic:

30.00 milliamperes supply

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

-0.5 volts power source and 7.0 volts power source

Time Rating Per Chacteristic:

50.00 nanoseconds propagation delay time, low to high level output and 50.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Prom

Memory Capacity:

Unknown

Test Data Document:

14933-5962-86703 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

16 printed circuit