NSN 5962-01-201-6827

Memory Microcircuit

FSC: 5962 NIIN: 012016827

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Product Characteristics

NSN:

5962012016827

Demilitarization:

INC:

41015

Shelf Life:

N/A

Body Length:

1.280 inches

Body Width:

Between 0.220 inches and 0.310 inches

Body Height:

Between 0.140 inches and 0.185 inches

Maximum Power Dissipation Rating:

1.2 watts

Operating Tempurature Range:

-55.0 to 125.0 degrees celsius

Storage Tempurature Range:

-65.0 to 150.0 degrees celsius

End Application:

Receiving set an/alr56c

Features Provided:

Bipolar and programmable and monolithic

Inclosure Material:

Ceramic or glass or metal

Inclosure Configuration:

Dual-in-line

Output Logic Form:

Transistor-transistor logic

Input Circuit Pattern:

20 input

Case Outline Source And Designator:

D-9 mil-m-38510

Current Rating Per Characteristic:

100.00 milliamperes output sink

Terminal Surface Treatment:

Solder

Part Name Assigned By Controlling Agency:

20-input 4-output registered and-or gate array

Voltage Rating And Type Per Characteristic:

-0.5 volts power source and 12.0 volts power source

Time Rating Per Chacteristic:

30.00 nanoseconds propagation delay time, low to high level output and 30.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Pal

Test Data Document:

14933-84129 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

24 printed circuit