NSN 5962-01-199-7518

Memory Microcircuit

FSC: 5962     NIIN: 011997518
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Product Characteristics

NSN:
5962011997518
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Body Length:
0.960 inches
Body Width:
Between 0.220 inches and 0.310 inches
Body Height:
0.185 inches
Maximum Power Dissipation Rating:
715.0 milliwatts
Operating Tempurature Range:
-55.0/+125.0 degrees celsius
Storage Tempurature Range:
-65.0/+150.0 degrees celsius
End Application:
Av-8a/b/cdcn
Features Provided:
Hermetically sealed and burn in and programmable and bipolar and 3-state output
Inclosure Material:
Ceramic
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Transistor-transistor logic
Input Circuit Pattern:
12 input
Case Outline Source And Designator:
D-6 mil-m-38510
Terminal Surface Treatment:
Solder
Voltage Rating And Type Per Characteristic:
-1.5 volts power source and 5.5 volts power source
Time Rating Per Chacteristic:
90.00 nanoseconds propagation delay time, low to high level output and 90.00 nanoseconds propagation delay time, high to low level output
Memory Device Type:
Rom
Memory Capacity:
Unknown
Test Data Document:
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
Terminal Type And Quantity:
18 printed circuit

Part Numbers

  • 102093-005
    GE AVIATION SYSTEMS LLC
  • M38510/20902BVX
    MILITARY SPECIFICATIONS
  • QMDC014-001
    GE AVIATION SYSTEMS LLC
  • ROM/PROM
    DLA LAND AND MARITIME

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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Cage Codes
GE AVIATION SYSTEMS LLC - 058R3
MILITARY SPECIFICATIONS - 81349
DLA LAND AND MARITIME - 16236