NSN 5962-01-196-6113

Memory Microcircuit

FSC: 5962 NIIN: 011966113

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Product Characteristics

NSN:

5962011966113

Demilitarization:

INC:

41015

Shelf Life:

N/A

Body Length:

1.290 inches

Body Width:

Between 0.500 inches and 0.610 inches

Body Height:

0.210 inches

Maximum Power Dissipation Rating:

1.04 watts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

Features Provided:

Hermetically sealed and burn in and monolithic and bipolar and programmable

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Output Logic Form:

Bipolar metal-oxide semiconductor

Input Circuit Pattern:

14 input

Case Outline Source And Designator:

D-3 mil-m-38510

Current Rating Per Characteristic:

100.00 milliamperes output

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

5.0 volts power source

Time Rating Per Chacteristic:

45.00 nanoseconds propagation delay time, low to high level output and 45.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Rom

Memory Capacity:

Unknown

Test Data Document:

14933-82008 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

24 printed circuit