NSN 5962-01-174-1380

Memory Microcircuit

FSC: 5962 NIIN: 011741380

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Product Characteristics

NSN:

5962011741380

Demilitarization:

INC:

41015

Shelf Life:

N/A

Body Length:

1.060 inches

Body Width:

Between 0.220 inches and 0.310 inches

Body Height:

0.185 inches

Maximum Power Dissipation Rating:

2.0 watts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

Features Provided:

Hermetically sealed and burn in and monolithic and programmable and bipolar

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Output Logic Form:

Bipolar metal-oxide semiconductor

Input Circuit Pattern:

16 input

Case Outline Source And Designator:

D-8 mil-m-38510

Current Rating Per Characteristic:

100.00 milliamperes reverse current, dc

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

5.0 volts power source

Time Rating Per Chacteristic:

45.00 nanoseconds propagation delay time, low to high level output and 45.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Pal

Test Data Document:

81349-mil-m-38510 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

20 printed circuit

Specification Data:

81349-mil-m-38510/503 government specification