NSN 5962-01-123-3180

Memory Microcircuit

FSC: 5962 NIIN: 011233180

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Product Characteristics

NSN:

5962011233180

Demilitarization:

DEMIL/MLI

INC:

41015

Shelf Life:

N/A

Body Length:

Between 0.355 inches and 0.400 inches

Body Width:

Between 0.355 inches and 0.400 inches

Body Height:

0.090 inches

Maximum Power Dissipation Rating:

175.0 milliwatts

Operating Tempurature Range:

-55.0/+125.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

Features Provided:

Hermetically sealed and monolithic and bipolar and burn in, mil-std-883, class b and electrostatic sensitive and programmable and w/buffered output and 3-state output

Inclosure Material:

Glass and metal

Inclosure Configuration:

Flat pack

Output Logic Form:

Transistor-transistor logic

Input Circuit Pattern:

12 input

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

5.5 volts power source

Time Rating Per Chacteristic:

75.00 nanoseconds propagation delay time, low to high level output and 75.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Rom

Test Data Document:

82577-932883 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

18 flat leads