NSN 5962-01-116-5779

Memory Microcircuit

FSC: 5962 NIIN: 011165779

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Product Characteristics

NSN:

5962011165779

Demilitarization:

DEMIL/MLI

INC:

41015

Shelf Life:

N/A

Body Length:

Between 0.880 inches and 0.920 inches

Body Width:

Between 0.280 inches and 0.305 inches

Body Height:

0.140 inches

Maximum Power Dissipation Rating:

1.2 watts

Operating Tempurature Range:

+0.0/+70.0 degrees celsius

Storage Tempurature Range:

-65.0/+150.0 degrees celsius

End Application:

6930-01-102-2345 36378

Features Provided:

Hermetically sealed and high speed and 3-state output

Inclosure Material:

Ceramic

Inclosure Configuration:

Dual-in-line

Output Logic Form:

N-type metal oxide-semiconductor logic

Input Circuit Pattern:

15 input

Terminal Surface Treatment:

Solder

Voltage Rating And Type Per Characteristic:

7.0 volts power source

Time Rating Per Chacteristic:

70.00 nanoseconds propagation delay time, low to high level output and 70.00 nanoseconds propagation delay time, high to low level output

Memory Device Type:

Ram

Memory Capacity:

Unknown

Terminal Type And Quantity:

18 printed circuit

Part Numbers

4014535-001
RAYTHEON TECHNICAL SERVICES COMPANY
7758026-01
L3 TECHNOLOGIES, INC.
C2147
INTEL CORP SALES OFFICE

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON TECHNICAL SERVICES COMPANY - 36378

L3 TECHNOLOGIES, INC. - 1PQF4

INTEL CORP SALES OFFICE - 34649