NSN 5962-01-111-7483

Memory Microcircuit

FSC: 5962     NIIN: 011117483
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Product Characteristics

NSN:
5962011117483
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Maximum Power Dissipation Rating:
500.0 milliwatts
Operating Tempurature Range:
-0.0/+75.0 degrees celsius
Storage Tempurature Range:
-65.0/+150.0 degrees celsius
Features Provided:
Hermetically sealed and monolithic and programmable and 3-state output and w/enable
Inclosure Material:
Ceramic
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Transistor-transistor logic
Input Circuit Pattern:
10 input
Terminal Surface Treatment:
Solder
Voltage Rating And Type Per Characteristic:
5.5 volts power source
Time Rating Per Chacteristic:
70.00 nanoseconds propagation delay time, low to high level output
Memory Device Type:
Rom
Test Data Document:
05869-726009-1 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity:
16 printed circuit

Part Numbers

  • 45715-1
    RAYTHEON COMPANY
  • 722906-50
    RAYTHEON COMPANY
  • ROM/PROM FAMILY 008
    DLA LAND AND MARITIME

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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Cage Codes
RAYTHEON COMPANY - 05869
DLA LAND AND MARITIME - 16236