NSN 5962-01-043-9838

Memory Microcircuit

FSC: 5962     NIIN: 010439838

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Product Characteristics

NSN:
5962010439838
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Body Length:
Between 1.175 inches and 1.300 inches
Body Width:
Between 0.490 inches and 0.550 inches
Body Height:
0.150 inches
Maximum Power Dissipation Rating:
2.0 watts
Operating Tempurature Range:
+0.0/+70.0 degrees celsius
Storage Tempurature Range:
-65.0/+125.0 degrees celsius
Features Provided:
Burn in, mil-std-883, class b and edge triggered and erasable and hermetically sealed and monolithic and positive outputs and w/buffered output and w/decoded output
Inclosure Material:
Ceramic and glass
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Metal oxide-semiconductor logic
Input Circuit Pattern:
12 input
Case Outline Source And Designator:
D-1 mil-m-38510
Terminal Surface Treatment:
Solder
Voltage Rating And Type Per Characteristic:
0.5 volts power source
Time Rating Per Chacteristic:
650.00 nanoseconds propagation delay time, low to high level output and 650.00 nanoseconds propagation delay time, high to low level output
Memory Device Type:
Rom
Terminal Type And Quantity:
24 printed circuit

Part Numbers

  • 615572-903
    RAYTHEON COMPANY

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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