NSN 5962-01-031-1919

Memory Microcircuit

FSC: 5962     NIIN: 010311919

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Product Characteristics

NSN:
5962010311919
Demilitarization:
DEMIL/MLI
INC:
41015
Shelf Life:
N/A
Body Length:
Between 0.755 inches and 0.785 inches
Body Width:
Between 0.220 inches and 0.280 inches
Body Height:
Between 0.140 inches and 0.180 inches
Maximum Power Dissipation Rating:
500.0 milliwatts
Operating Tempurature Range:
-55.0/+125.0 degrees celsius
Storage Tempurature Range:
-65.0/+150.0 degrees celsius
End Application:
Digital data set type an/fsq-111 fscm 81995
Features Provided:
Hermetically sealed and high speed and monolithic and bipolar and positive outputs and programmable and w/decoded output and w/enable and 3-state output
Inclosure Material:
Ceramic and glass
Inclosure Configuration:
Dual-in-line
Output Logic Form:
Transistor-transistor logic
Input Circuit Pattern:
6 input
Terminal Surface Treatment:
Solder
Voltage Rating And Type Per Characteristic:
-1.0 volts power source and 5.5 volts power source
Time Rating Per Chacteristic:
35.00 nanoseconds propagation delay time, low to high level output
Memory Device Type:
Rom
Memory Capacity:
Unknown
Terminal Type And Quantity:
16 printed circuit

Part Numbers

  • 583R524H01
    NORTHROP GRUMMAN SYSTEMS CORPORATION
  • 722913-50
    RAYTHEON COMPANY
  • ROM/PROM
    DLA LAND AND MARITIME
  • S82S123F
    PHILIPS SEMICONDUCTORS INC
  • S82S123F/883C
    PHILIPS SEMICONDUCTORS INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8542900000 - Electronic integrated circuits and microassembly parts.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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