NSN 5961-01-535-2194

Photo Semiconductor Device

FSC: 5961     NIIN: 015352194

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Product Characteristics

NSN:
5961015352194
Demilitarization:
NO
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Plastic
Overall Length:
Between 0.180 inches and 0.200 inches
Terminal Length:
0.500 inches
Overall Diameter:
Between 0.145 inches and 0.165 inches
Mounting Method:
Terminal
Semiconductor Material:
Gallium arsenide
Voltage Rating In Volts Per Characteristic:
30.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter to collector, base open
Current Rating Per Characteristic:
0.55 microamperes service voltage
Maximum Operating Tempurature Per Measurement Point:
100.0 degrees celsius ambient air
Part Name Assigned By Controlling Agency:
Infrared selected npn silicon phootransistor
Terminal Type And Quantity:
2 uninsulated wire lead

Part Numbers

  • OP505D
    OPTEK TECHNOLOGY, INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-01-535-2194 semiconductor device,photo
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