NSN 5961-01-476-2270

Diode Semiconductor Device

FSC: 5961 NIIN: 014762270

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Product Characteristics

NSN:

5961014762270

Demilitarization:

INC:

20589

Shelf Life:

N/A

Voltage Rating In Volts Per Characteristic:

6.12 reverse breakdown voltage, instantaneous and 7.48 reverse breakdown voltage, instantaneous

Current Rating Per Characteristic:

10.00 milliamperes drain current pascal

Maximum Operating Tempurature Per Measurement Point:

150.0 degrees celsius ambient air

Special Features:

Diode is a 5 amp - 580 watt bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 5.50 volts; max. Reverse leakage (ir) at vso is 600 microamps (limit is doubled when reverse breakdown voltage is 10 volts or less); max. Clamping voltage (vcl) 10.8 volts at peak pulse current (ipp) 53.0 amps

Precious Material And Location:

Plating gold

Precious Material:

Gold

Part Numbers

SZZD2.8-6.8-10.8-10
SUSSEX SEMICONDUCTOR INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541100070 - Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

SUSSEX SEMICONDUCTOR INC - 0AEM1