NSN 5961-01-466-7199

Diode Semiconductor Device

FSC: 5961 NIIN: 014667199

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Product Characteristics

NSN:

5961014667199

Demilitarization:

INC:

20589

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.800 inches

Terminal Length:

0.600 inches

Overall Width:

0.437 inches

End Application:

E/ifscmir sensor assembly

Mounting Facility Quantity:

Mounting Method:

Threaded hole

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

500.0 reverse voltage, peak and 500.0 reverse voltage, instantaneous and 350.0 reverse voltage, total rms

Current Rating Per Characteristic:

15.00 amperes forward current, total rms megahertz and 60.00 amperes source cutoff current outside diameter

Power Rating Per Characteristic:

41.0 watts small-signal output power, common-base preset

Capacitance Rating In Picofarads:

150.0

Maximum Operating Tempurature Per Measurement Point:

-65.0 degrees celsius case and 175.0 degrees celsius case

Test Data Document:

0af43-206656 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

1 unthreaded hole