NSN 5961-01-418-6113

Thyristor Semiconductor Device

FSC: 5961 NIIN: 014186113

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Product Characteristics

NSN:

5961014186113

Demilitarization:

DEMIL/MLI

INC:

33096

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

1.646 inches

Overall Diameter:

0.544 inches

Mounting Facility Quantity:

Electrode Internally-electrically Connected To Case:

Anode

Mounting Method:

Threaded stud

Overall Width Across Flats:

0.563 inches

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

-5.0 peak gate voltage and 420.0 off-state voltage, rms total and 600.0 repetitive peak reverse voltage and 600.0 repetitive peak off-state voltage and 700.0 nonrepetitive peak reverse voltage and 700.0 nonrepetitive peak off-state voltage

Current Rating Per Characteristic:

355.00 amperes peak forward surge current nanoamperes and 35.00 amperes forward current, total rms horsepower metric

Power Rating Per Characteristic:

60.0 watts small-signal input power, common-collector blank and 1.0 watts small-signal input power, common-collector universal

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius junction

Test Data Document:

53711-5906198 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

2 tab, solder lug and 1 threaded stud