NSN 5961-01-413-4336

Unitized Semiconductor Devices

FSC: 5961 NIIN: 014134336

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Product Characteristics

NSN:

5961014134336

Demilitarization:

DEMIL/MLI

INC:

61962

Shelf Life:

N/A

Inclosure Material:

Metal or glass

Overall Length:

0.560 inches

Overall Height:

0.255 inches

Overall Width:

0.370 inches

Function For Which Designed:

Bidirectional

Component Name And Quantity:

4 semiconductor device diode

Mounting Method:

Terminal

Semiconductor Material:

Silicon all semiconductor

Voltage Rating In Volts Per Characteristic:

2.15 forward voltage, peak all semiconductor device diode

Current Rating Per Characteristic:

4.00 amperes forward current, average blank all semiconductor device diode and 90.00 amperes peak forward surge current nanoamperes all semiconductor device diode and 300.00 amperes source cutoff current universal all semiconductor device diode

Power Rating Per Characteristic:

2.5 watts small-signal input power, common-collector preset all semiconductor device diode

Capacitance Rating In Picofarads:

95.0 all semiconductor

Maximum Operating Tempurature Per Measurement Point:

175.0 degrees celsius junction

Special Features:

Varistor diode assembly

Test Data Document:

49956-g204968 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

Terminal Type And Quantity:

2 uninsulated wire lead

Part Numbers

G204968-1
RAYTHEON COMPANY
MC510394
MICROSEMI CORPORATION

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 3B150

MICROSEMI CORPORATION - 14552