NSN 5961-01-364-1982

Diode Semiconductor Device

FSC: 5961 NIIN: 013641982

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Product Characteristics

NSN:

5961013641982

Demilitarization:

INC:

20589

Shelf Life:

N/A

Inclosure Material:

Ceramic or glass or metal

Overall Length:

Between 0.150 inches and 0.170 inches

Overall Diameter:

Between 0.068 inches and 0.076 inches

Mounting Method:

Terminal

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

0.4 forward voltage, dc and 15.0 breakdown voltage, dc

Current Rating Per Characteristic:

100.00 nanoamperes forward current, average peak and 20.00 milliamperes service voltage preset

Power Rating Per Characteristic:

250.0 milliwatts small-signal input power, common-emitter outside diameter

Capacitance Rating In Picofarads:

1.2

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius ambient air

Terminal Type And Quantity:

2 uninsulated wire lead

Part Numbers

5082-6683
HEWLETT-PACKARD CO VIDEO
845581-1
RAYTHEON COMPANY
845581-2
RAYTHEON COMPANY
A2X1378
FREQUENCY ELECTRONICS, INC.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541100070 - Diodes, other than photosensitve or led, with a maximum current of 0.5 a or less.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

Similar NSN

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Cage Codes

HEWLETT-PACKARD CO VIDEO - 50436

RAYTHEON COMPANY - 3B150

RAYTHEON COMPANY - 49956

FREQUENCY ELECTRONICS, INC. - 14844