NSN 5961-01-310-1999

Thyristor Semiconductor Device

FSC: 5961     NIIN: 013101999
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Product Characteristics

NSN:
5961013101999
Demilitarization:
NO
INC:
33096
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
8.327 inches
Function For Which Designed:
Rectifier
End Application:
Radio terminal digital troposcatter (an/trc-170). Singars system family. Communications program, combat theater (tri-tac)478i.
Mounting Facility Quantity:
1
Internal Configuration:
Junction contact
Mounting Method:
Threaded stud
Features Provided:
Hermetically sealed case
Overall Width Across Flats:
1.063 inches
Thread Size:
0.500 inches
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
750.0 repetitive peak reverse voltage and 750.0 nonrepetitive peak reverse voltage and 750.0 repetitive peak off-state voltage
Current Rating Per Characteristic:
110.00 amperes forward current, total rms nanoamperes
Power Rating Per Characteristic:
100.0 watts small-signal input power, common-collector blank
Maximum Operating Tempurature Per Measurement Point:
125.0 degrees celsius junction
Special Features:
Junction pattern arrangement: pnpn
Thread Series Designator:
Unf
Terminal Type And Quantity:
3 tab, solder lug

Part Numbers

  • 78-5834
    INTERNATIONAL RECTIFIER CORPORATION
  • C165
    POWEREX, INC
  • G283420-1
    RAYTHEON COMPANY
  • T507087074
    POWEREX, INC
  • T507087074AQ
    POWEREX, INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541300080 - Thyristors, diacs & triacs, other than photosensitive devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-01-310-1999 semiconductor device,thyristor
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Cage Codes
INTERNATIONAL RECTIFIER CORPORATION - 59993
POWEREX, INC - 66844
RAYTHEON COMPANY - 3B150