NSN 5961-01-233-2881

Transistor

FSC: 5961     NIIN: 012332881

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Product Characteristics

NSN:
5961012332881
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
1.573 inches
Overall Height:
0.450 inches
Overall Width:
1.050 inches
End Application:
Patriot missile
Mounting Facility Quantity:
2
Electrode Internally-electrically Connected To Case:
Collector
Mounting Method:
Unthreaded hole
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
750.0 collector to emitter voltage, dc with specified circuit between base and emitter and 400.0 collector to emitter voltage/static/base open and 8.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic:
Between 10.00 amperes source cutoff current and 15.00 amperes source cutoff current
Power Rating Per Characteristic:
175.0 watts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius ambient air
Test Data Document:
18876-mis-19836/77 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity:
2 pin and 1 case

Part Numbers

  • 105SEB285
    SOLITRON DEVICES, INC.
  • JANTX2N6547
    MILITARY SPECIFICATIONS
  • MIS-19836/77
    U S ARMY AVIATION AND MISSILE

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

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ITAR registered supplier

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