NSN 5961-01-225-0627

Transistor

FSC: 5961     NIIN: 012250627

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Product Characteristics

NSN:
5961012250627
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal and glass
Overall Length:
1.296 inches
End Application:
1430-01-087-6337 information and coordination central, guided missle system
Mounting Facility Quantity:
1
Internal Configuration:
Junction contact
Mounting Method:
Threaded stud
Features Provided:
Burn in
Overall Width Across Flats:
Between 0.423 inches and 0.438 inches
Thread Size:
0.190 inches
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
80.0 collector to emitter voltage/static/base open and 100.0 collector to base voltage/static/emitter open and 6.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic:
2.00 amperes source cutoff current and 1.00 amperes source cutoff current
Power Rating Per Characteristic:
2.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Special Features:
Junction pattern arrangement: pnp
Test Data Document:
18876-11438979 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Thread Series Designator:
Unf
Terminal Type And Quantity:
3 tab, solder lug

Part Numbers

  • 11438979
    U S ARMY AVIATION AND MISSILE
  • 15834
    FALKOR PARTNERS, LLC
  • STA0507
    SILICON TRANSISTOR CORP

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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