NSN 5961-01-212-8023

Unitized Semiconductor Devices

FSC: 5961 NIIN: 012128023

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Product Characteristics

NSN:

5961012128023

Demilitarization:

DEMIL/MLI

INC:

61962

Shelf Life:

N/A

Inclosure Material:

Ceramic and metal

Overall Length:

0.900 inches

Overall Height:

0.280 inches

Overall Width:

0.735 inches

End Application:

Satellite communications set, an/wsc- (v) 9

Component Name And Quantity:

2 transistor

Mounting Method:

Press fit

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon all transistor

Voltage Rating In Volts Per Characteristic:

60.0 breakdown voltage, collector-to-emitter, with base short-circuited to emitter all transistor and 32.0 breakdown voltage, collector-to-emitter, base open all transistor and 4.0 breakdown voltage, emitter-to-base, collector open all transistor

Current Rating Per Characteristic:

7.00 amperes source cutoff current all transistor

Power Rating Per Characteristic:

270.0 watts small-signal input power, common-collector preset all transistor

Transfer Ratio:

100.0 static forward current transfer ratio, common-emitter all transistor

Maximum Operating Tempurature Per Measurement Point:

150.0 degrees celsius junction

Special Features:

Ceramic case contains beryllium oxide - handle and dispose iaw hazmat procedures; transistor junction pattern arrangement: npn

Precious Material And Location:

Leads gold

Precious Material:

Gold

Test Data Document:

00724-20-00942 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

8 ribbon