NSN 5961-01-184-5458

Photo Semiconductor Device

FSC: 5961     NIIN: 011845458
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Product Characteristics

NSN:
5961011845458
Demilitarization:
DEMIL/MLI
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Ceramic
Overall Length:
0.125 inches
Overall Diameter:
0.093 inches
Internal Configuration:
Junction contact
Mounting Method:
Press fit
Features Provided:
Hermetically sealed case
Semiconductor Material:
Gallium arsenide
Voltage Rating In Volts Per Characteristic:
3.0 reverse voltage, dc
Current Rating Per Characteristic:
150.00 milliamperes source cutoff current preset
Power Rating Per Characteristic:
350.0 milliwatts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point:
125.0 degrees celsius ambient air
Special Features:
Junction pattern arrangement: pn
Terminal Type And Quantity:
2 uninsulated wire lead

Demand History (Solicitations)

Solicitation Qty End Date Purchase Request Small Business
SPE7M515T6490 32 04/23/2015 0057267187 100%

Part Numbers

  • 20-00682-001
    RAYTHEON COMPANY
  • 62030-001
    MICROPAC INDUSTRIES, INC.
  • SLED96
    FREESCALE SEMICONDUCTOR, INC.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-01-184-5458 semiconductor device,photo
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Cage Codes
RAYTHEON COMPANY - 00724
MICROPAC INDUSTRIES, INC. - 31757
FREESCALE SEMICONDUCTOR, INC. - 04713