NSN 5961-01-182-3082

Photo Semiconductor Device

FSC: 5961 NIIN: 011823082

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Product Characteristics

NSN:

5961011823082

Demilitarization:

INC:

20587

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.125 inches

Overall Diameter:

0.093 inches

Internal Configuration:

Junction contact

Mounting Method:

Press fit

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

50.0 collector to emitter voltage/static/base open and 7.0 collector-to-emitter, resistance between base and emitter

Power Rating Per Characteristic:

50.0 milliwatts small-signal input power, common-collector absolute

Maximum Operating Tempurature Per Measurement Point:

125.0 degrees celsius junction

Special Features:

Junction pattern arrangement: npn

Terminal Type And Quantity:

3 uninsulated wire lead

Part Numbers

20-00688-001
RAYTHEON COMPANY
61064-001
MICROPAC INDUSTRIES, INC.
M1165000-001
MICROPAC INDUSTRIES, INC.
MII65000-001
MICROPAC INDUSTRIES, INC.
SRD190
FREESCALE SEMICONDUCTOR, INC.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 00724

MICROPAC INDUSTRIES, INC. - 31757

FREESCALE SEMICONDUCTOR, INC. - 04713