NSN 5961-01-177-1327

Transistor

FSC: 5961     NIIN: 011771327
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Product Characteristics

NSN:
5961011771327
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
1.573 inches
Overall Height:
0.350 inches
Overall Width:
1.050 inches
End Application:
Radar bomb directing set an/tpb-1d
Mounting Facility Quantity:
2
Internal Configuration:
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation:
To-3
Mounting Method:
Unthreaded hole
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
700.0 breakdown voltage, collector-to-base, emitter open and 300.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic:
10.00 amperes source cutoff current
Power Rating Per Characteristic:
125.0 watts small-signal input power, common-collector absolute
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Special Features:
Junction pattern arrangement: npn
Terminal Type And Quantity:
2 pin and 1 case
Specification Data:
12115-8103-7121 manufacturers source control

Part Numbers

  • 8103-7121-1
    DRS ICAS, LLC
  • SES462
    SEMITRONICS CORP
  • ST7791
    SEMICONDUCTOR TECHNOLOGY INC

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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Cage Codes
DRS ICAS, LLC - 12115
SEMITRONICS CORP - 31338
SEMICONDUCTOR TECHNOLOGY INC - 50891