NSN 5961-01-165-1673

Photo Semiconductor Device

FSC: 5961 NIIN: 011651673

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Product Characteristics

NSN:

5961011651673

Demilitarization:

DEMIL/MLI

INC:

20587

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.185 inches

Overall Diameter:

0.340 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Mounting Method:

Threaded stud

Features Provided:

Hermetically sealed case

Thread Size:

0.138 inches

Semiconductor Material:

Gallium arsenide

Voltage Rating In Volts Per Characteristic:

2.0 reverse voltage, dc

Current Rating Per Characteristic:

500.00 milliamperes source cutoff current preset

Special Features:

Junction pattern arrangement: pn

Thread Series Designator:

Unc

Terminal Type And Quantity:

1 tab, solder lug and 1 threaded stud

Part Numbers

801651-1
RAYTHEON COMPANY
TIES06
TEXAS INSTRUMENTS INCORPORATED

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 96214

TEXAS INSTRUMENTS INCORPORATED - 01295