NSN 5961-01-137-0024

Transistor

FSC: 5961     NIIN: 011370024

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Product Characteristics

NSN:
5961011370024
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
0.520 inches
Overall Diameter:
1.250 inches
End Application:
An/fxq-4(toss
Mounting Facility Quantity:
1
Internal Configuration:
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation:
To-36
Electrode Internally-electrically Connected To Case:
Collector
Mounting Method:
Threaded stud
Features Provided:
Hermetically sealed case
Thread Size:
0.190 inches
Semiconductor Material:
Germanium
Voltage Rating In Volts Per Characteristic:
45.0 breakdown voltage, collector-to-base, emitter open and 25.0 breakdown voltage, emitter-to-base, collector open and 30.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic:
60.00 amperes collector current, dc and 10.00 amperes base current, dc
Power Rating Per Characteristic:
170.0 watts collector power dissipation
Maximum Operating Tempurature Per Measurement Point:
125.0 degrees celsius junction
Special Features:
Junction pattern arrangement: pnp
Thread Series Designator:
Unf
Terminal Type And Quantity:
1 threaded stud and 2 pin

Demand History (Solicitations)

Solicitation Qty End Date Purchase Request Small Business
SPE7M919T0068 1 11/01/2018 0076784105 0%
SPE7M918T0336 1 11/13/2017 0071460336 0%

Part Numbers

  • 2N4048
    GPD OPTOELECTRONICS CORP.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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