NSN 5961-01-120-1235

Transistor

FSC: 5961 NIIN: 011201235

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Product Characteristics

NSN:

5961011201235

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

Between 0.250 inches and 0.450 inches

Overall Diameter:

0.875 inches

End Application:

F16maintntring 81755 fscm

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Joint Electronic Device Engineering Council/jedec/case Outline Designation:

To-3

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

80.0 collector to base voltage/static/emitter open and 80.0 collector to emitter voltage/static/base open and 5.0 emitter to base voltage, static, collector open

Current Rating Per Characteristic:

Between 0.25 amperes source cutoff current and 10.00 amperes source cutoff current

Power Rating Per Characteristic:

6.0 watts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius ambient air

Special Features:

Junction pattern arrangement: npn

Test Data Document:

81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).

Terminal Type And Quantity:

1 case and 2 pin

Specification Data:

81349-mil-s-19500/523 government specification