NSN 5961-01-061-6530

Transistor

FSC: 5961     NIIN: 010616530

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Product Characteristics

NSN:
5961010616530
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
Between 0.250 inches and 0.450 inches
Overall Diameter:
0.875 inches
Mounting Facility Quantity:
2
Internal Configuration:
Junction contact
Joint Electronic Device Engineering Council/jedec/case Outline Designation:
To-3
Electrode Internally-electrically Connected To Case:
Collector
Internal Junction Configuration:
Pnp
Mounting Method:
Unthreaded hole
Features Provided:
Hermetically sealed case and mounting hardware
Semiconductor Material:
Germanium
Voltage Rating In Volts Per Characteristic:
80.0 breakdown voltage, collector-to-base, emitter open and 60.0 breakdown voltage, collector-to-emitter, base open and 2.5 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic:
Between 12.00 amperes source cutoff current and 60.00 amperes source cutoff current
Power Rating Per Characteristic:
120.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point:
125.0 degrees celsius junction
Terminal Type And Quantity:
2 uninsulated wire lead and 1 case
Specification Data:
80131-release5782 professional/industrial association specification

Part Numbers

  • 2N5435
    ELECTRONIC INDUSTRIES ASSOCIATION
  • RELEASE5782
    ELECTRONIC INDUSTRIES ASSOCIATION

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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