NSN 5961-01-049-8367

Photo Semiconductor Device

FSC: 5961     NIIN: 010498367

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Product Characteristics

NSN:
5961010498367
Demilitarization:
DEMIL/MLI
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Plastic
Overall Length:
Between 0.170 inches and 0.210 inches
Overall Height:
Between 0.125 inches and 0.165 inches
Overall Width:
0.205 inches
Internal Configuration:
Junction contact
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
50.0 collector to base voltage/static/emitter open and 50.0 collector to emitter voltage/static/base open and 5.0 emitter to base voltage, static, collector open
Current Rating Per Characteristic:
0.10 microamperes source cutoff current pascal and 700.00 microamperes forward current, total rms minor
Special Features:
Junction pattern arrangement: npn
Terminal Type And Quantity:
3 uninsulated wire lead

Part Numbers

  • L14E2
    GENERAL ELECTRIC CO
  • L14H2
    GENERAL ELECTRIC CO

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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NSN: 5961-01-049-8367 semiconductor device,photo
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