NSN 5961-01-041-1553

Photo Semiconductor Device

FSC: 5961     NIIN: 010411553

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Product Characteristics

NSN:
5961010411553
Demilitarization:
DEMIL/MLI
INC:
20587
Shelf Life:
N/A
Inclosure Material:
Metal and plastic
Overall Length:
0.114 inches
Overall Diameter:
0.098 inches
Function For Which Designed:
Phototransistor
Internal Configuration:
Junction contact
Mounting Method:
Press fit
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
40.0 collector to emitter voltage/static/base open and 5.0 emitter to collector voltage, dc
Current Rating Per Characteristic:
200.00 milliamperes zero-gate-voltage source current blank
Power Rating Per Characteristic:
100.0 milliwatts small-signal input power, common-collector preset
Maximum Operating Tempurature Per Measurement Point:
150.0 degrees celsius ambient air
Special Features:
Junction pattern arrangement: npn
Terminal Type And Quantity:
1 uninsulated wire lead and 1 case

Part Numbers

  • 403937
    TARGET CORPORATION
  • CLT5160
    CLAIREX ELECTRONICS DIV OF

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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