NSN 5961-01-033-8776

Photo Semiconductor Device

FSC: 5961     NIIN: 010338776

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Product Characteristics

NSN:
5961010338776
Demilitarization:
NO
INC:
20587
Shelf Life:
N/A
Overall Length:
0.125 inches
Overall Diameter:
Between 0.083 inches and 0.093 inches
Internal Configuration:
Junction contact
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
50.0 breakdown voltage, collector-to-emitter, base open
Current Rating Per Characteristic:
100.00 microamperes source cutoff current and 100.00 microamperes source cutoff current blank
Power Rating Per Characteristic:
50.0 milliwatts small-signal input power, common-collector absolute
Special Features:
Junction pattern arrangement: npn
Test Data Document:
00724-20-00688 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Terminal Type And Quantity:
1 flange and 2 uninsulated wire lead

Part Numbers

  • 20-00688-003
    RAYTHEON COMPANY
  • 61064-101
    MICROPAC INDUSTRIES, INC.
  • 65000-101
    MICROPAC INDUSTRIES, INC.
  • MII65000-101
    IV-ELECTRONIC KLAUS VESPERMANN KG
  • MRD 604
    FREESCALE SEMICONDUCTOR, INC.
  • SRD190H3
    FREESCALE SEMICONDUCTOR, INC.

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541409500 - Photosensitive semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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