NSN 5961-01-025-7560

Transistor

FSC: 5961 NIIN: 010257560

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Product Characteristics

NSN:

5961010257560

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.200 inches

Overall Diameter:

0.875 inches

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

450.0 breakdown voltage, collector-to-base, emitter open and 300.0 breakdown voltage, collector-to-emitter, base open and 6.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

Between 7.00 amperes source cutoff current and 20.00 amperes source cutoff current

Power Rating Per Characteristic:

110.0 watts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius junction

Special Features:

Junction pattern arrangement: npn

Terminal Type And Quantity:

2 uninsulated wire lead and 1 case

Part Numbers

588150-2
RAYTHEON COMPANY
65114
RCA CORP
NES8068
MICROSEMI CORP.- MASSACHUSETTS

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 3B150

RCA CORP - 54590

MICROSEMI CORP.- MASSACHUSETTS - 43611