NSN 5961-01-025-6193

Transistor

FSC: 5961 NIIN: 010256193

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Product Characteristics

NSN:

5961010256193

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

Between 1.308 inches and 1.385 inches

Overall Height:

Between 0.660 inches and 0.798 inches

Overall Width:

1.050 inches

End Application:

An/tpb-1c radar bomb dir set

Mounting Facility Quantity:

Internal Configuration:

Junction contact

Joint Electronic Device Engineering Council/jedec/case Outline Designation:

To-3

Electrode Internally-electrically Connected To Case:

Collector

Mounting Method:

Unthreaded hole

Features Provided:

Hermetically sealed case

Semiconductor Material:

Silicon

Voltage Rating In Volts Per Characteristic:

700.0 breakdown voltage, collector-to-base, emitter open and 300.0 breakdown voltage, collector-to-emitter, base open and 5.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

10.00 amperes zero-gate-voltage source current blank and 4.00 amperes zero-gate-voltage source current of standard range

Power Rating Per Characteristic:

125.0 watts small-signal input power, common-collector preset

Maximum Operating Tempurature Per Measurement Point:

200.0 degrees celsius junction

Special Features:

Junction pattern arrangement: npn

Terminal Type And Quantity:

2 pin and 1 case