NSN 5961-01-012-6680

Transistor

FSC: 5961     NIIN: 010126680
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Product Characteristics

NSN:
5961010126680
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
1.530 inches
Overall Diameter:
0.875 inches
Mounting Facility Quantity:
2
Internal Configuration:
Junction contact
Electrode Internally-electrically Connected To Case:
Collector
Mounting Method:
Unthreaded hole
Features Provided:
Hermetically sealed case
Semiconductor Material:
Silicon
Voltage Rating In Volts Per Characteristic:
160.0 breakdown voltage, collector-to-base, emitter open and 7.0 breakdown voltage, collector-to-emitter, base open and 140.0 breakdown voltage, emitter-to-base, collector open
Current Rating Per Characteristic:
16.00 amperes source cutoff current
Power Rating Per Characteristic:
150.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point:
200.0 degrees celsius junction
Special Features:
Junction pattern arrangement: npn.
Terminal Type And Quantity:
2 pin and 1 case

Demand History (Solicitations)

Solicitation Qty End Date Purchase Request Small Business
SPE7M518T987C 326 09/10/2018 0076035156 0%
SPE7M518T1435 478 10/27/2017 0071216356 0%
SPE7M115TY763 173 08/21/2015 0059684173 100%

Part Numbers

  • 2N3773
    SILICON TRANSISTOR CORP
  • 352-0690-030
    ROCKWELL COLLINS, INC.
  • 69-719
    DEPARTMENT OF DEFENSE PROJECT

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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Cage Codes
SILICON TRANSISTOR CORP - 07256
ROCKWELL COLLINS, INC. - 13499
DEPARTMENT OF DEFENSE PROJECT - 30554