NSN 5961-00-954-5817

Transistor

FSC: 5961 NIIN: 009545817

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Product Characteristics

NSN:

5961009545817

Demilitarization:

INC:

20588

Shelf Life:

N/A

Inclosure Material:

Metal

Overall Length:

0.335 inches

Terminal Length:

1.500 inches

Overall Diameter:

0.265 inches

Internal Configuration:

Junction contact

Mounting Method:

Terminal

Terminal Circle Diameter:

0.100 inches

Semiconductor Material:

Germanium

Voltage Rating In Volts Per Characteristic:

40.0 breakdown voltage, collector-to-base, emitter open and 25.0 breakdown voltage, collector-to-emitter, base open and 2.0 breakdown voltage, emitter-to-base, collector open

Current Rating Per Characteristic:

30.00 milliamperes source cutoff current

Power Rating Per Characteristic:

125.0 milliwatts small-signal input power, common-collector

Maximum Operating Tempurature Per Measurement Point:

100.0 degrees celsius junction

Special Features:

Junction pattern arrangement: pnp

Terminal Type And Quantity:

3 uninsulated wire lead

Part Numbers

2N1039
SILICON TRANSISTOR CORP
2N2188
TEXAS INSTRUMENTS INCORPORATED
666215-721
BAE SYSTEMS INFORMATION AND

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

SILICON TRANSISTOR CORP - 07256

TEXAS INSTRUMENTS INCORPORATED - 01295

BAE SYSTEMS INFORMATION AND - 12436