NSN 5961-00-932-9320

Semiconductor Device Set

FSC: 5961 NIIN: 009329320

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Product Characteristics

NSN:

5961009329320

Demilitarization:

INC:

20590

Shelf Life:

N/A

Inclosure Material:

Metal all transistor

Overall Length:

0.170 inches all transistor and 0.210 inches all transistor

Terminal Length:

0.500 inches all transistor

Overall Diameter:

0.209 inches all transistor and 0.230 inches all transistor

Internal Configuration:

Field effect all transistor

Channel Polarity And Control Type (non-core):

P-channel junction type all transistor

Electrode Internally-electrically Connected To Case:

Gate all transistor

Component Function Relationship:

Matched

Component Name And Quantity:

2 transistor

Mounting Method:

Terminal all transistor

Terminal Circle Diameter:

0.100 inches all transistor

Semiconductor Material:

Silicon all transistor

Voltage Rating In Volts Per Characteristic:

30.0 gate to source voltage all transistor

Current Rating Per Characteristic:

10.00 nanoamperes zero-gate-voltage source current watts all transistor

Power Rating Per Characteristic:

300.0 milliwatts small-signal input power, common-collector absolute all transistor

Maximum Operating Tempurature Per Measurement Point:

100.0 degrees celsius ambient air all transistor

Terminal Type And Quantity:

3 pin all transistor

Part Numbers

317-0504-001
RAYTHEON COMPANY
SES 334
SEMITRONICS CORP
SU838
SILICONIX INCORPORATED

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

No known electrostatic discharge.

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

ITAR Registered
DDTC Registered
HAZMAT Certified
AS9120 Quality Standards
100% Quality Inspections

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Cage Codes

RAYTHEON COMPANY - 97871

SEMITRONICS CORP - 31338

SILICONIX INCORPORATED - 17856