NSN 5961-00-829-1630

Transistor

FSC: 5961     NIIN: 008291630
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Product Characteristics

NSN:
5961008291630
Demilitarization:
NO
INC:
20588
Shelf Life:
N/A
Inclosure Material:
Metal
Overall Length:
0.562 inches
Overall Diameter:
0.875 inches
Mounting Facility Quantity:
2
Internal Configuration:
Junction contact
Electrode Internally-electrically Connected To Case:
Collector
Mounting Method:
Unthreaded hole
Features Provided:
Hermetically sealed case
Semiconductor Material:
Germanium
Voltage Rating In Volts Per Characteristic:
-100.0 collector to base voltage, dc and -50.0 collector to emitter voltage, dc and -1.5 emitter to base voltage, instantaneous
Power Rating Per Characteristic:
30.0 watts small-signal input power, common-collector
Maximum Operating Tempurature Per Measurement Point:
100.0 degrees celsius junction
Special Features:
Junction pattern arrangement: pnp
Test Data Document:
81349-mil-s-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
Terminal Type And Quantity:
2 pin and 1 case
Specification Data:
81349-mil-s-19500/88 government specification

Part Numbers

  • 4192800-074
    RAYTHEON COMPANY
  • JAN2N1046
    MILITARY SPECIFICATIONS
  • MILS19500-88
    MILITARY SPECIFICATIONS

Shipping & Handling

HMIRS:

No MSDS. No hazardous material.

ESD:

Has ESD sensitivity

Schedule B:

8541500080 - Semiconductor devices, nesoi.

Professional Distribution

  •   ITAR Registered
  •   DDTC Registered
  •   HAZMAT Certified
  •   AS9120 Quality Standards
  •   100% Quality Inspections
ITAR registered supplier

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Cage Codes
RAYTHEON COMPANY - 05869
MILITARY SPECIFICATIONS - 81349